a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units v (br)dss v gs = 0 v i ds = 100 ma 65 v i dss v ds = 28 v v gs = 0 v 5.0 ma i gss v ds = 0 v v gs = 20 v 1.0 a v gs v ds = 10 v i d = 100 ma 1.0 5.0 v v ds v gs = 10 v i d = 10 a 1.5 v g fs v ds = 10 v i d = 5 a 3500 ms c iss c oss c rss v gs = 28 v v ds = 0 v f = 1.0 mhz 375 188 26 pf g ps d v dd = 28 v i dq = 2 x 250 ma p out = 300 w f = 175 mhz 12 50 14 55 db % vhf power mosfet silicon n-channel enhancement mode vft300-28 description: the vft300-28 is designed for wideband high power vhf amplifier applications operating up to 250 mhz. features: ? p g = 14 db typical at 175 mhz ? d = 55% typ. at p out = 300 watts ? omnigold ? metalization system maximum ratings i d 16 a v (br)dss 65 v v dgr 65 v v gs 40 v p diss 500 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.35 c/w package style .400 bal flg (d) order code: asi10707 minimum inches / mm .380 / 9.65 .580 / 14.73 b c d e f g a maximum .620 / 15.75 .390 / 9.91 inches / mm h dim k l i j .003 / 0.08 .060 / 1.52 .007 / 0.18 .070 / 1.78 .230 / 5.84 n m .850 / 21.59 .870 / 22.10 .220 / 5.59 .230 / 5.84 .435 / 11.05 .100 / 2.54 .115 / 2.92 .407 / 10.34 .395 / 10.03 1.335 / 33.91 1.345 / 34.16 .210 / 5.33 .080x45 a b f g h i j k l m (4x).060 r .1925 d c e full r n .125 / 3.18 1.090 / 27.69 1.105 / 28.07
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